Search results for "radiation testing"
showing 9 items of 9 documents
Dynamic Test Methods for COTS SRAMs
2014
International audience; In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmos…
Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
2015
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.
From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II
2008
The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key dete…
Response of GAFChromic® HD-V2 film dosimeter in 10-300 Gy dose range for radiation testing of electronic devices
2019
The study reported in this paper aimed to investigate the response of a GAFChromic? HD-V2 film dosimeter in the dose range between 10 and 300 Gy, normally used to perform irradiation tests on electronic devices with a 60Co gamma-ray irradiator. The well-defined linearity of response in terms of absorbance as a function of absorbed dose, easiness of handling and data analysis of irradiated dosimeters, reproducibility, stability, and insensitivity to visible light and most of the environmental parameters, make HD-V2 film a flexible, inexpensive and reliable dose measurement device. The study has shown a fogging effect of the dosimeter response since its value changes over time. Strategies and…
Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
2016
International audience; The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry, with a possible effect due to fluence. Dynamic tests results show a high sensitivity of this memory to switching activity of this peripheral circuitry.
Single-event effects of space and atmospheric radiation on memory components
2017
Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was a…
Analysis of the Photoneutron Field Near the THz Dump of the CLEAR Accelerator at CERN With SEU Measurements and Simulations
2022
We study the radiation environment near the terahertz (THz) dump of the CERN Linear Electron Accelerator for Research (CLEAR) electron accelerator at CERN, using FLUktuierende KAskade in German (FLUKA) simulations and single-event upset (SEU) measurements taken with 32-Mbit Integrated Silicon Solution Inc. (ISSI) static random access memories (SRAMs). The main focus is on the characterization of the neutron field to evaluate its suitability for radiation tests of electronics in comparison with other irradiation facilities. Neutrons at CLEAR are produced via photonuclear reactions, mostly initiated by photons from the electromagnetic cascades that occur when the beam is absorbed by the dump …
SEE on Different Layers of Stacked-SRAMs
2015
International audience; This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The …
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
2015
International audience; Various failure scenarios may occur during irradiation testing of SRAMs, which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them.